NP-507: RF amplifier 10-1000 MHz 2 watts

np507  

NP Technologies Model NP-507
 Designed for linear application in the 10 to 1000 MHz range. This amplifier utilizes RF Power MOSFET devices that provide high gain, wide dynamic range and an excellent 3rd order intercept point. Suggested applications: multi-carrier, pulse, AM & FM modulation.

 

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ELECTRICAL SPECIFICATION @ VDD = +28VDC: Temp.=25°C, 50Ω System

Parameter
Symbol
Min
Typ
Max
Unit
Operating Frequency
BW
10
-
1000
MHz
Power Output Saturated
Psat
-
2
-
Watt
Power Output P-1dB
P-1dB
-
1
-
Watt
Gain
G
10
11
-
dB
Small Signal Gain Flatness
ΔG
-
-
±1.0
dB
Input VSWR
S11
-
1.3:1
1.5:1
-
Harmonics @ 20 Watts
H
-
-28
-20
dBc
Inter-modulation Point
2 Tones, 100mW per tone @ 900 & 901 MHz
IP3
-
+36
-
dBm
Spurious Signals
dBc
-
-70
-60
dBc
Operating Voltage
Vdc
24
28
30
Volt
Operating Current
Amps
-
300
450
Amp
Enable / Disable (shut down pin: gnd=off, open=on)
ms
Not included
ms

MECHANICAL SPECIFICATIONS

Parameter
Description
Limits
Units
Dimentions
2.0 x 1.6 x .075
Max
Inch
RF Connectors In / Out
SMA
-
-
DC Connectors
Filtered feed-thru
-
-
Cooling
Heat-sink not included
-
-
Weight
Max
lb

PROTECTIONS

Thermal Shutdown
None
Typ
Input Overdrive
+24dBM max
Max
Load VSWR
Infinite up to 1 watt
Max
Reverse Polarity Protection
None
-

ENVIRONMENTAL CHARACTERISTICS

Parameter
Symbol
Min
Typ
Max
Unit
Operating Case Temperature
Tc
0°C
-
50°C
°C
Storage Temperature
Tstg
-30°C
-
100°C
°C
Relative humidity non-condensation
RH
95
-
-
%
NP Technologies, Inc. | 2393 Teller Rd. Suite 108 Newbury Park, CA 91320 | Phone 805 376-9299 | All rights reserved.