NP-530: RF amplifier 0.8-3GHz 32dBM

np530  

NP Technologies Model NP-530
Designed for linear application in the 0.8-3GHz range. This amplifier utilizes RF GaAs FET devices that provide high gain and wide dynamic range. Suggested applications: Video, CW, multi-carrier, pulse, AM & FM modulation.

 

Download complete datasheet

ELECTRICAL SPECIFICATION @ VDD = +12.5VDC: Temp.=25°C, 50Ω System

Parameter
Symbol
Min
Typ
Max
Unit
Operating Frequency
BW
0.8
-
3.0
GHz
Power Output Saturated
Psat
-
32
-
dBM
Power Output P-1dB
P-1dB
-
30
-
dBM
Gain
G
36
38
-
dB
Small Signal Gain Flatness
ΔG
-
±2
-
dB
Input VSWR
S11
-
-
2.0:1
-
Harmonics at 30dBM 2nd / 3rd
H
-
-30/-50
-
dBc
Inter-modulation Point
Measured at 2GHz, 100KHz spacing, 20dBm avg.
IP3
-
+47
-
dBm
Spurious Signals
dBc
-
-70
-60
dBc
Operating Voltage
Vdc
11
12.5
14
Volt
Operating Current at 1 watts
Amps
-
525
600
mAmp
Enable / Disable (shut down pin: gnd=off, open=on)
ms
Typical 30us off, 60us on.
ms

MECHANICAL SPECIFICATIONS

Parameter
Description
Limits
Units
Dimentions
2.5" x 4.7 " x 0.57"
Max
Inch
RF Connectors In / Out
SMA in / out
-
-
DC Connectors
Filtered feed-through
-
-
Cooling
Heat-sink not included
-
-
Weight
0.5
Max
lb

PROTECTIONS

Thermal Shutdown
None
Typ
Input Overdrive
None
Max
Load VSWR
6.0:1 up to 30dBm
Max
Reverse Polarity Protection
None
-

ENVIRONMENTAL CHARACTERISTICS

Parameter
Symbol
Min
Typ
Max
Unit
Operating Case Temperature
Tc
0°C
-
50°C
°C
Storage Temperature
Tstg
-30°C
-
100°C
°C
Relative humidity non-condensation
RH
95
-
-
%
NP Technologies, Inc. | 2393 Teller Rd. Suite 108 Newbury Park, CA 91320 | Phone 805 376-9299 | All rights reserved.